Silicon Carbide Ceramic

Silicon carbide (SiC) is a ceramic material that ranks second only to diamond in hardness. It exhibits excellent heat dissipation, stable chemical properties, and a low surface friction coefficient. Consequently, its wear resistance is outstanding across various contact surfaces. Silicon carbide ceramics can maintain stability over a wide temperature range, minimizing thermal deformation and enabling their application in fields such as electronics, automotive, aerospace, and industrial machinery.

Silicon Carbide Advantages

  • Hardness second only to diamond

  • SiC has extremely high temperature resistance

  • Excellent thermal conductivity

  • The thermal expansion coefficient of SiC is low (about 4.0 × 10 ⁻⁶/K)

  • Strong resistance to chemical corrosion

  • High fracture toughness and compressive strength

  • SiC material has good wear resistance

  • Excellent antioxidant properties

  • Can maintain high strength under both high and low temperature conditions

  • Low density, lighter than many metal materials


Silicon Carbide Uses


  • High temperature and high voltage power semiconductor devices

  • Mechanical wear-resistant seals

  • heat exchanger

  • Refractory lining

  • Gas turbine blades

  • SiC combustion nozzle

  • Optical reflector

  • High temperature sensor

  • SiC ceramic bearings

  • Power electronic heat dissipation substrate

  • High voltage transformer components


Products

Silicon Carbide Material Properties

Properties of silicon carbide

Silicon   carbide ceramics

item

unit

Typical value

Physical property

colour


black.

density

g/cm³

3.1

Gas   permeability


1300

hydroscopicity


0.10%

Mechanical property

Monger   hardness

Lv.

9

Rockwell   hardness

HRA

90

Vickers   Hardness (Hv50)

Gpa(kg/mm)

500

Bending   strength (20 °C)

Mpa

350

Compressive   strength (20 °C)

Mpa

200

Modulus of   elasticity

Gpa

300

Poisson's   ratio (20 °C)


0.15

Fracture   toughness (20 °C)

MPa*1/2

3

Thermal performance

Thermal   conductivity (20 °C)-400°C

W/(m·K)

150

Thermal   expansion

10-6/℃

3×10^-6 /°C

Maximum   service temperature

°C

1600

Electronic property

Dielectric   medium

KV/mm

5

Dielectric   constant

Er

4

Dielectric   loss Angle (1MHz)


0.001



Silicon Carbide Machining

Silicon carbide (SiC) is classified as a difficult to machine material due to its high hardness and brittleness, and conventional cutting, drilling, and milling processes are difficult to effectively treat it. In order to achieve precision machining of silicon carbide ceramics, specialized tools and techniques are usually used.


Jundro is a globally leading silicon carbide company with extensive experience in machining SiC. Through our customized processing services, it has become an ideal choice for various high-precision equipment. We provide high-quality and precise ceramic components for various industries such as semiconductor, machinery, chemical, aerospace, etc. If you would like to inquire about customized machining parts, please contact us and our experts will be happy to assist you.


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Industry Applications

Frequently Asked Question

ask

what is silicon carbide

Q:

Silicon carbide, with the chemical formula SiC, is an inorganic substance composed of carbon and silicon

Silicon carbide exists in nature in the form of the mineral mosonite, but this form is extremely rare. Silicon carbide has a very high hardness and is an important abrasive used in the production of refractory materials, such as gold steel sand or refractory sand. In addition, silicon carbide is also a semiconductor material with characteristics of high temperature resistance, high frequency resistance, and high voltage resistance, which make it very useful in power electronic equipment, especially in applications that require efficient energy management, such as new energy, automobiles, photovoltaics, industrial control, and other fields


ask

What is silicon carbide ceramic used for

Q:

Silicon carbide ceramics are ceramic materials made by sintering silicon carbide. Due to its excellent performance and characteristics, it is widely used in various fields. The following are some of the main uses of silicon carbide ceramics, such as braking systems and mechanical components in mechanical engineering, semiconductor devices in electronic engineering, corrosion resistant equipment in chemical engineering, thermal engineering, and other fields, providing important characteristics such as stability, wear resistance, and high-temperature stability for equipment and products

ask

How hard is silicon carbide ceramic

Q:

The crystal structure of silicon carbide ceramics is stable, with very high hardness and tensile strength. Generally speaking, the hardness of silicon carbide ceramics can reach 9-9.5 levels in Mohs hardness, which is much harder than many traditional materials such as metal and glass. Meanwhile, the bending strength of silicon carbide ceramics is also very high, usually between 300-700 MPa.

ask

The Properties of Silicon Carbide Ceramics

Q:

Silicon carbide ceramics (SiC) combine various excellent properties, making them excellent in many applications. It has high bending strength, excellent oxidation resistance, good corrosion resistance, high wear resistance, and low friction coefficient. These room temperature mechanical properties, combined with their high-temperature strength, such as creep resistance, enable silicon carbide ceramics to maintain good performance at high temperatures.

The oxidation resistance of silicon carbide ceramics is the best among all non oxide ceramics, and even at high temperatures of 1600 ℃, their high temperature strength is still considerable. In addition, the chemical stability of silicon carbide ceramics is attributed to the formation of a silicon dioxide protective layer on its surface, which is particularly significant in oxidizing environments. Its hardness is very high, with Mohs hardness ranging from 9.2 to 9.6, second only to diamond and boron carbide, making it an important component in abrasives


ask

What is the difference between silicon carbide and boron carbide?

Q:

Silicon carbide (SiC) is a compound composed of two elements, silicon and carbon, whose crystal is composed of plasma (Si) and carbon (C) atoms uniformly arranged in the lattice structure of a cubic crystal system. Boron carbide (B4C) is a compound composed of two elements, boron and carbon. Its molecule contains four boron atoms and one carbon atom, and the connection between boron atoms is extremely strong

Hardness: Silicon carbide is a high hardness material that can reach above 9.0 in Mohs hardness, while boron carbide has a higher hardness of up to 9.3

Thermal performance: Silicon carbide has extremely high temperature resistance and can withstand temperatures up to 1600 ℃ in air. Boron carbide, on the other hand, is a substance with a higher melting point and can withstand temperatures as high as 2600 ℃

Thermal expansion coefficient: The thermal expansion coefficient of boron carbide is close to zero, so it can be used as a structural material in high-temperature environments. The thermal expansion coefficient of silicon carbide is slightly higher

Wear resistance: Silicon carbide has excellent wear resistance and can be used to manufacture wear-resistant ceramic cutting tools, nozzles, bearings and other parts. Boron carbide has excellent wear resistance due to its extremely high hardness


ask

Application of Silicon Carbide Ceramics in Semiconductors

Q:

Silicon carbide (SiC), as an important high-end ceramic material, has broad application prospects in high-tech fields such as semiconductors, nuclear energy, national defense, and space technology due to its excellent high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical properties, and oxidation resistance

In the semiconductor field, silicon carbide ceramic materials are mainly used in key equipment for integrated circuit manufacturing, such as silicon carbide workbenches, guides, reflectors, ceramic suction cups, arms, grinding discs, fixtures, etc. for lithography machines


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