Aluminum Nitride Ceramics (AlN)

Q:

Aluminum nitride (AlN) is an excellent material if high thermal conductivity and electrical insulation properties are required, which makes it ideal for thermal management and electrical applications. In addition, AlN is a common alternative to beryllium oxide (BeO) in the semiconductor industry because it does not pose a health hazard when processed. Aluminum nitride has electrical insulation properties and thermal expansion coefficients that are well matched to silicon wafer materials, making it a useful material for electronic applications where high temperatures and heat dissipation are often an issue.

Application field

High power electrical insulators

Power electronics

radiator

Cooling fin

Water-cooled radiator

Laser radiator power rectifier

Laser module

Aerospace, Power electronics, rectifiers

Q:

Aluminum nitride ceramics exhibit exceptional thermal conductivity properties, making them highly desirable for various applications, especially in the realm of electronics and thermal management. With a thermal conductivity of around 140-180 W/mK, aluminum nitride surpasses many other traditional ceramic materials. This high thermal conductivity, coupled with its excellent electrical insulation properties and thermal stability at high temperatures, renders it invaluable in heat sink applications, LED packaging, and semiconductor processing. Additionally, its compatibility with other materials like silicon makes it an ideal choice for integrated circuit substrates, where efficient heat dissipation is crucial for optimal device performance.

Q:

Exposure to AlN through mouth, inhalation, or injection may cause bone and lung toxicity. Repeated exposure can irritate the eyes and skin.

Q:

While aluminum nitride ceramics offer impressive thermal conductivity and electrical insulation properties, they also come with certain drawbacks. One notable limitation is their relatively high cost compared to other ceramic materials, primarily due to the complex manufacturing processes involved. Additionally, aluminum nitride ceramics can be brittle, making them prone to cracking or fracturing under mechanical stress, which may limit their applicability in certain structural applications. Furthermore, their thermal expansion coefficient may not perfectly match that of other materials they come into contact with, potentially leading to issues such as thermal stress and failure in electronic device packaging. Despite these challenges, ongoing research and advancements in fabrication techniques aim to mitigate these drawbacks and further enhance the performance and versatility of aluminum nitride ceramics.

Q:

Aluminum Nitride (AlN) exhibits notable thermal, electrical, mechanical, and chemical properties. In terms of thermal performance, its conductivity ranges from 100 to 260W/m • K, surpassing room temperature conductivity by 10 to 15 times. AlN shares similarities with Silicon in thermal expansion coefficient. Electrically, it demonstrates excellent insulation with a cathode rate greater than 10^14 Ω• cm, a dielectric constant of around 8.0, and a dielectric loss of 10^-4. Mechanically, dense AlN ceramics boast a Vickers hardness of 12GPa, Mohs hardness of 7-8, Young's modulus of 308GPa, and bending strength up to 350MPa at room temperature. Its chemical properties include high-temperature corrosion resistance, non-wettability by various metals, stability in certain molten salts, and a high decomposition temperature, making it valuable in demanding applications. However, it exhibits strong hygroscopicity and reacts readily with water vapor in the air.

Q:

Aluminum nitride (AlN) and aluminum oxide (Al2O3) are ceramic materials with distinct properties. AlN, composed of aluminum and nitrogen, boasts higher thermal conductivity (100-260W/m • K) compared to Al2O3 (typically around 30 W/m • K). AlN also exhibits excellent insulation with a room temperature cathode rate greater than 10^14 Ω• cm. In contrast, Al2O3, consisting of aluminum and oxygen, offers good resistance to corrosion and high temperatures. Both materials possess high hardness and strength, with AlN typically having a Vickers hardness of 12GPa and a bending strength of up to 350MPa at room temperature. However, the specific mechanical properties may vary. Overall, the choice between AlN and Al2O3 depends on the specific requirements of the application, considering factors such as thermal conductivity, electrical resistivity, and chemical stability.