Silicon carbide ceramics

Reaction Bonded Silicon Carbide (RB-SiC) is produced by infiltrating molten silicon into a porous carbon/SiC preform. During this process, silicon reacts with carbon to form additional SiC, but residual free silicon remains in the structure.

In contrast, Pressureless Sintered Silicon Carbide (SSiC) is manufactured by high-temperature sintering of fine SiC powders without adding free silicon, resulting in a nearly fully dense and pure SiC structure.

Because of this fundamental difference, RB-SiC and SSiC exhibit distinct performance characteristics. RB-SiC is easier to manufacture in complex shapes and large sizes, with lower cost and good thermal conductivity, but it has lower hardness, lower high-temperature resistance, and limited corrosion resistance due to the presence of free silicon.

SSiC, on the other hand, offers higher hardness, superior wear resistance, excellent chemical stability, and better high-temperature performance, making it more suitable for demanding environments such as semiconductor equipment, high-temperature systems, and corrosive conditions. However, it is more difficult to process and typically more expensive.

In practical applications, RB-SiC is often selected for large structural components and cost-sensitive projects, while SSiC is preferred when maximum performance, durability, and chemical resistance are required.

It has high thermal conductivity, which allows efficient heat dissipation and helps maintain temperature uniformity during processes such as etching and deposition. At the same time, SiC maintains excellent dimensional stability under high temperatures, reducing deformation and ensuring process precision.

In addition, SiC provides outstanding resistance to plasma, corrosive gases, and aggressive chemicals, making it ideal for components exposed to harsh semiconductor processing conditions. Its high hardness and wear resistance also contribute to long service life and reduced particle generation, which is critical for contamination control.

These properties make SiC a preferred material for key semiconductor components such as etching rings, wafer chucks, susceptors, and structural parts where performance, stability, and cleanliness are essential.

It has high thermal conductivity, which allows efficient heat dissipation and helps maintain temperature uniformity during processes such as etching and deposition. At the same time, SiC maintains excellent dimensional stability under high temperatures, reducing deformation and ensuring process precision.

In addition, SiC provides outstanding resistance to plasma, corrosive gases, and aggressive chemicals, making it ideal for components exposed to harsh semiconductor processing conditions. Its high hardness and wear resistance also contribute to long service life and reduced particle generation, which is critical for contamination control.

These properties make SiC a preferred material for key semiconductor components such as etching rings, wafer chucks, susceptors, and structural parts where performance, stability, and cleanliness are essential.