Single Crystal Silicon is a silicon material with a complete crystal structure. It can be doped into N-type silicon or P-type silicon to meet different application requirements and become a core material in the semiconductor and optical fields.
Single Crystal Silicon is a common material in semiconductors with excellent properties. Jundro Ceramics is an ultra-hard materials manufacturer that can provide precision processing of N-type silicon and P-type silicon. With our rich experience and diverse equipment, we can perfectly meet your application needs.
The crystal structure is complete and defect-free
High electron mobility
High temperature resistance, suitable for harsh environments
Bending resistance and wear resistance
Controllable purity, divided into N type and P type to meet different application requirements
Can be ultra-precision processed
The table below lists the performance parameters of magnesium oxide-stabilized zirconia ceramics. These values are for reference only and may vary slightly depending on batch conditions.
| Property | Symbol (Unit) | Mono-Si |
|---|---|---|
| Lattice | — | Diamond cubic (Fd3m) |
| Lattice Constant | a (Å) | 5.431 |
| Density | ρ (g/cm³) | 2.329 |
| Melting Point | T_m (°C) | 1414 |
| Property | Symbol (Unit) | Mono-Si |
|---|---|---|
| Young's Modulus | E (GPa) | 130 - 188 |
| Poisson's Ratio | v | 0.22 |
| Fracture Toughness | K_IC (MPa·m¹/²) | 0.6 - 0.9 |
| Thermal Conductivity | κ (W/m·K) | 148 @ 300 K |
| Specific Heat | C_p (J/kg·K) | 700 @ 300 K |
| Coeff. of Thermal Exp. | α (10⁻⁶/K) | 2.6 @ 25 - 300 °C |
| Property | Symbol (Unit) | Mono-Si |
|---|---|---|
| Bandgap | E_g (eV) | 1.12 @ 300 K |
| Intrinsic Carrier Conc. | n_i (cm⁻³) | 1 × 10¹⁰ @ 300 K |
| Relative Permittivity | ε_r | 11.7 |
| Electron Mobility | μ_n (cm²/V·s) | ≈ 1,350 @ 300 K |
| Hole Mobility | μ_p (cm²/V·s) | ≈ 450 @ 300 K |
| Refractive Index | n | 3.88 |
| Surface Tension | γ (J/m²) | 1.24 |
In demanding environments where Single Crystal Silicon (Mono-Si) reaches its limits, Silicon Carbide (SiC) offers a superior alternative. With higher thermal conductivity, wider bandgap, and better stability, SiC is ideal for high-temperature and high-power applications.
Single crystal silicon is a highly pure material with a uniform crystal structure, widely used in semiconductors, optics, and MEMS applications.
We can machine wafers, blocks, rings, plates, lenses, windows, and custom precision parts according to drawings.
Common applications include semiconductor devices, MEMS components, optical windows, infrared parts, precision fixtures, and high-stability structural components.
Macor is a machinable glass-ceramic made from fluorophlogopite mica crystals embedded in a borosilicate glass matrix. This composition gives it a rare
combination of metal-like machinability, excellent electrical insulation, low thermal conductivity, and stability up to 1000°C (no load) while maintaining very tight tolerances.
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